ASROCK H97 Anniversary Installation Guide Page 70

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H97 Anniversary
65
English
DRAM Conguration
DRAM Tweaker
Fine tune the DRAM settings by leaving marks in checkboxes. Click OK to conrm and
apply your new settings.
CAS# Latency (tCL)
e time between sending a column address to the memory and the beginning of the data
in response.
RAS# to CAS# Delay (tRCD)
e number of clock cycles required between the opening of a row of memory and
accessing columns within it.
Row Precharge Time (tRP)
e number of clock cycles required between the issuing of the precharge command
and opening the next row.
RAS# Active Time (tRAS)
e number of clock cycles required between a bank active command and issuing the
precharge command.
Command Rate (CR)
e delay between when a memory chip is selected and when the rst active command can
be issued.
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